STP80NF12 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STP80NF12
   Marking Code: P80NF12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220

STP80NF12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP80NF12 Datasheet (PDF)

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stp80nf12.pdf

STP80NF12N-channel 120 V, 0.013 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF12 120 V

..2. Size:261K inchange semiconductor
stp80nf12.pdf

isc N-Channel MOSFET Transistor STP80NF12FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

6.1. Size:232K st
stp80nf10fp.pdf