All MOSFET. STQ2NK60ZR-AP Datasheet

 

STQ2NK60ZR-AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: STQ2NK60ZR-AP
   Marking Code: Q2NK60ZR-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.7 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO92

 STQ2NK60ZR-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STQ2NK60ZR-AP Datasheet (PDF)

 ..1. Size:542K  st
 stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf

STQ2NK60ZR-AP STQ2NK60ZR-AP

STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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