All MOSFET. STQ2NK60ZR-AP Datasheet

 

STQ2NK60ZR-AP Datasheet and Replacement


   Type Designator: STQ2NK60ZR-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO92
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STQ2NK60ZR-AP Datasheet (PDF)

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STQ2NK60ZR-AP

STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UFZ24NL-TN3 | HLML6401 | HFD2N90 | IPL60R095CFD7 | UT3N10L-K08-3030-R | FQA19N20L | AP85T03GH-HF

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