STQ2NK60ZR-AP Specs and Replacement

Type Designator: STQ2NK60ZR-AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO92

STQ2NK60ZR-AP substitution

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STQ2NK60ZR-AP datasheet

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 stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf pdf_icon

STQ2NK60ZR-AP

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V ... See More ⇒

Detailed specifications: STP9NK65ZFP, STP9NK70Z, STP9NK70ZFP, STP9NK90Z, STP9NM60N, STQ1HNK60R, STQ1NK60ZR, STQ2HNK60ZR-AP, AON7506, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, STS12N3LLH5, STS12NF30L, STS13N3LLH5

Keywords - STQ2NK60ZR-AP MOSFET specs

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