All MOSFET. STQ2NK60ZR-AP Datasheet

 

STQ2NK60ZR-AP Datasheet and Replacement


   Type Designator: STQ2NK60ZR-AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO92
 

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STQ2NK60ZR-AP Datasheet (PDF)

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 stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf pdf_icon

STQ2NK60ZR-AP

STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

Datasheet: STP9NK65ZFP , STP9NK70Z , STP9NK70ZFP , STP9NK90Z , STP9NM60N , STQ1HNK60R , STQ1NK60ZR , STQ2HNK60ZR-AP , IRFP250 , STQ3N45K3-AP , STS10DN3LH5 , STS10N3LH5 , STS11N3LLH5 , STS11NF30L , STS12N3LLH5 , STS12NF30L , STS13N3LLH5 .

History: IPD800N06NG

Keywords - STQ2NK60ZR-AP MOSFET datasheet

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