STQ2NK60ZR-AP MOSFET. Datasheet pdf. Equivalent
Type Designator: STQ2NK60ZR-AP
Marking Code: Q2NK60ZR-AP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 0.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.7 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO92
STQ2NK60ZR-AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STQ2NK60ZR-AP Datasheet (PDF)
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stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf
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STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V
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