STS11N3LLH5 Datasheet and Replacement
Type Designator: STS11N3LLH5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO8
- MOSFET Cross-Reference Search
STS11N3LLH5 Datasheet (PDF)
sts11n3llh5.pdf

STS11N3LLH5N-channel 30 V, 0.012 , 11 A, SO-8STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS11N3LLH5 30 V
sts11nf30l.pdf

STS11NF30LN-channel 30V - 0.0085 - 11A SO-8Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS11NF30L 30V
sts11nf3ll.pdf

STS11NF3LLN-CHANNEL 30V - 0.008 - 11A SO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS11NF3LL 30 V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTA08N120P | IRFP21N60L | STT3P2UH7 | STD6N60M2 | UPA2756GR
Keywords - STS11N3LLH5 MOSFET datasheet
STS11N3LLH5 cross reference
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History: IXTA08N120P | IRFP21N60L | STT3P2UH7 | STD6N60M2 | UPA2756GR



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