STS11NF30L Specs and Replacement

Type Designator: STS11NF30L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SO8

STS11NF30L substitution

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STS11NF30L datasheet

 ..1. Size:339K  st
 sts11nf30l.pdf pdf_icon

STS11NF30L

STS11NF30L N-channel 30V - 0.0085 - 11A SO-8 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STS11NF30L 30V ... See More ⇒

 6.1. Size:271K  st
 sts11nf3ll.pdf pdf_icon

STS11NF30L

STS11NF3LL N-CHANNEL 30V - 0.008 - 11A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STS11NF3LL 30 V ... See More ⇒

 8.1. Size:727K  st
 sts11n3llh5.pdf pdf_icon

STS11NF30L

STS11N3LLH5 N-channel 30 V, 0.012 , 11 A, SO-8 STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STS11N3LLH5 30 V ... See More ⇒

Detailed specifications: STQ1HNK60R, STQ1NK60ZR, STQ2HNK60ZR-AP, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, BS170, STS12N3LLH5, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z

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