STS13N3LLH5 Specs and Replacement

Type Designator: STS13N3LLH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 295 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: SO8

STS13N3LLH5 substitution

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STS13N3LLH5 datasheet

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STS13N3LLH5

STS13N3LLH5 N-channel 30 V, 0.006 , 13 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS(on) ID 5 STS13N3LLH5 30 V ... See More ⇒

Detailed specifications: STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, STS12N3LLH5, STS12NF30L, IRF1407, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z, STS20N3LLH6, STS26N3LLH6, STS2DNF30L

Keywords - STS13N3LLH5 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs