STS19N3LLH6 Datasheet and Replacement
Type Designator: STS19N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SO8
STS19N3LLH6 substitution
STS19N3LLH6 Datasheet (PDF)
sts19n3llh6.pdf

STS19N3LLH6N-channel 30 V, 0.0049 , 19 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on) 1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Switch
sts1979.pdf

STS1979SemiconductorSemiconductorPNP Silicon TransistorDescription Medium power amplifierFeatures Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342Ordering InformationType NO. Marking Package CodeSTS1979 STS1979 TO-92Outline Dimensions unit : mm3.450.14.5
sts1980.pdf

STS1980Semiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit : mm 3.450
Datasheet: STS10DN3LH5 , STS10N3LH5 , STS11N3LLH5 , STS11NF30L , STS12N3LLH5 , STS12NF30L , STS13N3LLH5 , STS14N3LLH5 , STP80NF70 , STS1DN45K3 , STS1DNC45 , STS1NK60Z , STS20N3LLH6 , STS26N3LLH6 , STS2DNF30L , STS3N95K3 , STS4DNF30L .
History: MS60P02NE | STL65DN3LLH5
Keywords - STS19N3LLH6 MOSFET datasheet
STS19N3LLH6 cross reference
STS19N3LLH6 equivalent finder
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History: MS60P02NE | STL65DN3LLH5



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