STS19N3LLH6 Datasheet and Replacement
Type Designator: STS19N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SO8
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STS19N3LLH6 Datasheet (PDF)
sts19n3llh6.pdf

STS19N3LLH6N-channel 30 V, 0.0049 , 19 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on) 1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Switch
sts1979.pdf

STS1979SemiconductorSemiconductorPNP Silicon TransistorDescription Medium power amplifierFeatures Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342Ordering InformationType NO. Marking Package CodeSTS1979 STS1979 TO-92Outline Dimensions unit : mm3.450.14.5
sts1980.pdf

STS1980Semiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit : mm 3.450
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: JCS2N65FB | IRLR024 | CED05N8 | BUZ84 | GSM4953WS | AON6794 | BL10N70-A
Keywords - STS19N3LLH6 MOSFET datasheet
STS19N3LLH6 cross reference
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History: JCS2N65FB | IRLR024 | CED05N8 | BUZ84 | GSM4953WS | AON6794 | BL10N70-A



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