STS19N3LLH6N-channel 30 V, 0.0049 , 19 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on) 1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Switch

STS1979SemiconductorSemiconductorPNP Silicon TransistorDescription Medium power amplifierFeatures Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342Ordering InformationType NO. Marking Package CodeSTS1979 STS1979 TO-92Outline Dimensions unit : mm3.450.14.5

STS1980Semiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit : mm 3.450