STS1DNC45 MOSFET. Datasheet pdf. Equivalent
Type Designator: STS1DNC45
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id|ⓘ - Maximum Drain Current: 0.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 27.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: SO8
STS1DNC45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS1DNC45 Datasheet (PDF)
sts1dnc45.pdf
STS1DNC45DUAL N-CHANNEL 450V - 4.1 - 0.4ASO-8SuperMESH POWER MOSFETTYPE VDSS RDS(on) IDSTS1DNC45 450 V
sts1dn45k3.pdf
STS1DN45K3Dual N-channel 450 V, 3.2 , 0.5 A SuperMESH3Power MOSFET in SO-8Preliminary dataFeaturesRDS(on) Type VDSS ID PwmaxSTS1DN45K3 450 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDV302P
History: FDV302P
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