STS1DNC45 Specs and Replacement

Type Designator: STS1DNC45

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 27.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: SO8

STS1DNC45 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS1DNC45 datasheet

 ..1. Size:300K  st
sts1dnc45.pdf pdf_icon

STS1DNC45

STS1DNC45 DUAL N-CHANNEL 450V - 4.1 - 0.4ASO-8 SuperMESH POWER MOSFET TYPE VDSS RDS(on) ID STS1DNC45 450 V ... See More ⇒

 8.1. Size:434K  st
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STS1DNC45

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Detailed specifications: STS11N3LLH5, STS11NF30L, STS12N3LLH5, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, RFP50N06, STS1NK60Z, STS20N3LLH6, STS26N3LLH6, STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L

Keywords - STS1DNC45 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs