STS1DNC45 Specs and Replacement
Type Designator: STS1DNC45
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 27.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: SO8
STS1DNC45 substitution
- MOSFET ⓘ Cross-Reference Search
STS1DNC45 datasheet
sts1dnc45.pdf
STS1DNC45 DUAL N-CHANNEL 450V - 4.1 - 0.4ASO-8 SuperMESH POWER MOSFET TYPE VDSS RDS(on) ID STS1DNC45 450 V ... See More ⇒
Detailed specifications: STS11N3LLH5, STS11NF30L, STS12N3LLH5, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, RFP50N06, STS1NK60Z, STS20N3LLH6, STS26N3LLH6, STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L
Keywords - STS1DNC45 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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