STS1NK60Z MOSFET. Datasheet pdf. Equivalent
Type Designator: STS1NK60Z
Marking Code: S1NK60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 0.25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.9 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 17.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: SO8
STS1NK60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS1NK60Z Datasheet (PDF)
sts1nk60z.pdf
STS1NK60ZN-CHANNEL 600V - 13 - 0.25A- SO-8Zener-Protected SuperMESH Power MOSFETTYPE VDSS RDS(on) ID PwSTS1NK60Z 600 V
sts1nc60.pdf
STS1NC60N-CHANNEL 600V - 12 - 0.3A - SO-8PowerMESHII MOSFETTYPE VDSS RDS(on) IDSTS1NC60 600 V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2SK3703
History: 2SK3703
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918