STS1NK60Z Specs and Replacement

Type Designator: STS1NK60Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 17.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: SO8

STS1NK60Z substitution

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STS1NK60Z datasheet

 ..1. Size:303K  st
 sts1nk60z.pdf pdf_icon

STS1NK60Z

STS1NK60Z N-CHANNEL 600V - 13 - 0.25A- SO-8 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STS1NK60Z 600 V ... See More ⇒

 9.1. Size:272K  st
 sts1nc60.pdf pdf_icon

STS1NK60Z

STS1NC60 N-CHANNEL 600V - 12 - 0.3A - SO-8 PowerMESH II MOSFET TYPE VDSS RDS(on) ID STS1NC60 600 V ... See More ⇒

Detailed specifications: STS11NF30L, STS12N3LLH5, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, SI2302, STS20N3LLH6, STS26N3LLH6, STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L, STS4DPF20L

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