All MOSFET. STS4DPF30L Datasheet

 

STS4DPF30L Datasheet and Replacement


   Type Designator: STS4DPF30L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8
 

 STS4DPF30L substitution

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STS4DPF30L Datasheet (PDF)

 ..1. Size:108K  st
 sts4dpf30l.pdf pdf_icon

STS4DPF30L

STS4DPF30LDUAL P-CHANNEL 30V - 0.07 - 4A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS4DPF30L 30 V

 ..2. Size:926K  cn vbsemi
 sts4dpf30l.pdf pdf_icon

STS4DPF30L

STS4DPF30Lwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

 7.1. Size:259K  st
 sts4dpfs20l.pdf pdf_icon

STS4DPF30L

STS4DPFS20LP-CHANNEL 20V - 0.07 - 4A SO-8STripFET MOSFET PLUS SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSMOSFET VDSS RDS(on) ID20 V

 7.2. Size:252K  st
 sts4dpf20l.pdf pdf_icon

STS4DPF30L

STS4DPF20LDUAL P-CHANNEL 20V - 0.07 - 4A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS4DPF20L 20 V

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Datasheet: STS20N3LLH6 , STS26N3LLH6 , STS2DNF30L , STS3N95K3 , STS4DNF30L , STS4DNF60L , STS4DNFS30L , STS4DPF20L , K2611 , STS4NF100 , STS5DNF20V , STS5DNF60L , STS5N15F3 , STS5N15F4 , STS5NF60L , STS5PF30L , STS6NF20V .

History: HYG023N03LR1U | 18N20

Keywords - STS4DPF30L MOSFET datasheet

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 STS4DPF30L equivalent finder
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