STS4NF100 Specs and Replacement

Type Designator: STS4NF100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SO8

STS4NF100 substitution

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STS4NF100 datasheet

 ..1. Size:305K  st
 sts4nf100.pdf pdf_icon

STS4NF100

STS4NF100 N-channel 100V - 0.065 - 4A SO-8 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STS4NF100 100V ... See More ⇒

 ..2. Size:842K  cn vbsemi
 sts4nf100.pdf pdf_icon

STS4NF100

STS4NF100 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO... See More ⇒

Detailed specifications: STS26N3LLH6, STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L, STS4DPF20L, STS4DPF30L, P60NF06, STS5DNF20V, STS5DNF60L, STS5N15F3, STS5N15F4, STS5NF60L, STS5PF30L, STS6NF20V, STS7NF60L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.