STS6NF20V Datasheet. Specs and Replacement

Type Designator: STS6NF20V  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SO8

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STS6NF20V datasheet

 ..1. Size:530K  st
 sts6nf20v.pdf pdf_icon

STS6NF20V

STS6NF20V N-channel 20 V, 0.030 , 6 A SO-8 2.7 V drive STripFET II Power MOSFET Features Type VDSS RDS(on) ID ... See More ⇒

 9.1. Size:90K  samhop
 sts6n20.pdf pdf_icon

STS6NF20V

Gr P Pr P P STS6N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 1.05 @ VGS=10V Surface Mount Package. 0.8A 60V 1.30 @ VGS=4.5V D SOT23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAX... See More ⇒

Detailed specifications: STS4DPF30L, STS4NF100, STS5DNF20V, STS5DNF60L, STS5N15F3, STS5N15F4, STS5NF60L, STS5PF30L, IRFZ24N, STS7NF60L, STS7PF30L, STS8C5H30L, STS8DN3LLH5, STS8DNF3LL, STS9D8NH3LL, STS9NF30L, STS9NF3LL

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