All MOSFET. STS8C5H30L Datasheet

 

STS8C5H30L MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS8C5H30L
   Marking Code: S8C5H30L
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 16 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 7 nC
   Rise Time (tr): 14.5 nS
   Drain-Source Capacitance (Cd): 147 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
   Package: SO8

 STS8C5H30L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS8C5H30L Datasheet (PDF)

 ..1. Size:463K  st
 sts8c5h30l.pdf

STS8C5H30L STS8C5H30L

STS8C5H30LN-channel 30 V, 0.018 , 8 A, P-channel 30 V, 0.045 , 5 A SO-8low gate charge STripFET III MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS8C5H30L(N-channel) 30 V

 9.1. Size:1258K  st
 sts8c6h3ll.pdf

STS8C5H30L STS8C5H30L

STS8C6H3LLN-channel 30 V, 0.019 typ., 8 A, P-channel 30 V, 0.024 typ., 6 ASTripFET Power MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code Channel VDS RDS(on) max IDN 0.021 8 ASTS8C6H3LL 30 VP 0.030 5 A4 STripFETV N-channel Power MOSFET1 STripFETVI DeepGATE P-channel Power MOSFETSO-8 RDS(on)* Qg industry benc

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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