All MOSFET. STS8C5H30L Datasheet

 

STS8C5H30L Datasheet and Replacement


   Type Designator: STS8C5H30L
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
 

 STS8C5H30L substitution

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STS8C5H30L Datasheet (PDF)

 ..1. Size:463K  st
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STS8C5H30L

STS8C5H30LN-channel 30 V, 0.018 , 8 A, P-channel 30 V, 0.045 , 5 A SO-8low gate charge STripFET III MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS8C5H30L(N-channel) 30 V

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STS8C5H30L

STS8C6H3LLN-channel 30 V, 0.019 typ., 8 A, P-channel 30 V, 0.024 typ., 6 ASTripFET Power MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code Channel VDS RDS(on) max IDN 0.021 8 ASTS8C6H3LL 30 VP 0.030 5 A4 STripFETV N-channel Power MOSFET1 STripFETVI DeepGATE P-channel Power MOSFETSO-8 RDS(on)* Qg industry benc

Datasheet: STS5DNF60L , STS5N15F3 , STS5N15F4 , STS5NF60L , STS5PF30L , STS6NF20V , STS7NF60L , STS7PF30L , 60N06 , STS8DN3LLH5 , STS8DNF3LL , STS9D8NH3LL , STS9NF30L , STS9NF3LL , STT3PF20V , STU10NM60N , STU11NM60ND .

History: PSMN006-20K | UT2304

Keywords - STS8C5H30L MOSFET datasheet

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