STS8C5H30L Specs and Replacement

Type Designator: STS8C5H30L

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

STS8C5H30L substitution

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STS8C5H30L datasheet

 ..1. Size:463K  st
 sts8c5h30l.pdf pdf_icon

STS8C5H30L

STS8C5H30L N-channel 30 V, 0.018 , 8 A, P-channel 30 V, 0.045 , 5 A SO-8 low gate charge STripFET III MOSFET Features RDS(on) Type VDSS ID max STS8C5H30L(N-channel) 30 V ... See More ⇒

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 sts8c6h3ll.pdf pdf_icon

STS8C5H30L

STS8C6H3LL N-channel 30 V, 0.019 typ., 8 A, P-channel 30 V, 0.024 typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS(on) max ID N 0.021 8 A STS8C6H3LL 30 V P 0.030 5 A 4 STripFET V N-channel Power MOSFET 1 STripFET VI DeepGATE P-channel Power MOSFET SO-8 RDS(on)* Qg industry benc... See More ⇒

Detailed specifications: STS5DNF60L, STS5N15F3, STS5N15F4, STS5NF60L, STS5PF30L, STS6NF20V, STS7NF60L, STS7PF30L, IRLB3034, STS8DN3LLH5, STS8DNF3LL, STS9D8NH3LL, STS9NF30L, STS9NF3LL, STT3PF20V, STU10NM60N, STU11NM60ND

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