STS8DN3LLH5 Specs and Replacement

Type Designator: STS8DN3LLH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SO8

STS8DN3LLH5 substitution

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STS8DN3LLH5 datasheet

 ..1. Size:772K  st
 sts8dn3llh5.pdf pdf_icon

STS8DN3LLH5

STS8DN3LLH5 Dual N-channel 30 V, 0.0155 , 10 A, SO-8 STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STS8DN3LLH5 30 V ... See More ⇒

 8.1. Size:326K  st
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STS8DN3LLH5

STS8DNH3LL Dual n-channel 30 V - 0.018 - 8 A - SO-8 low gate charge STripFET III Power MOSFET Features Type VDSS RDS(on) max ID STS8DNH3LL 30 V ... See More ⇒

 8.2. Size:314K  st
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STS8DN3LLH5

STS8DNF3LL Dual N-channel 30V - 0.017 - 8A SO-8 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STS8DNF3LL 30V ... See More ⇒

 8.3. Size:706K  st
 sts8dn6lf6ag.pdf pdf_icon

STS8DN3LLH5

STS8DN6LF6AG Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STS8DN6LF6AG 60 V 24 m 8 A 3.2 W AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic l... See More ⇒

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Detailed specifications: STS5N15F3, STS5N15F4, STS5NF60L, STS5PF30L, STS6NF20V, STS7NF60L, STS7PF30L, STS8C5H30L, IRF9640, STS8DNF3LL, STS9D8NH3LL, STS9NF30L, STS9NF3LL, STT3PF20V, STU10NM60N, STU11NM60ND, STU12N65M5

Keywords - STS8DN3LLH5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.