All MOSFET. STS8DN3LLH5 Datasheet

 

STS8DN3LLH5 Datasheet and Replacement


   Type Designator: STS8DN3LLH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8
 

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STS8DN3LLH5 Datasheet (PDF)

 ..1. Size:772K  st
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STS8DN3LLH5

STS8DN3LLH5Dual N-channel 30 V, 0.0155 , 10 A, SO-8STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS8DN3LLH5 30 V

 8.1. Size:326K  st
 sts8dnh3ll.pdf pdf_icon

STS8DN3LLH5

STS8DNH3LLDual n-channel 30 V - 0.018 - 8 A - SO-8low gate charge STripFET III Power MOSFETFeaturesType VDSS RDS(on) max IDSTS8DNH3LL 30 V

 8.2. Size:314K  st
 sts8dnf3ll.pdf pdf_icon

STS8DN3LLH5

STS8DNF3LLDual N-channel 30V - 0.017 - 8A SO-8Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS8DNF3LL 30V

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 sts8dn6lf6ag.pdf pdf_icon

STS8DN3LLH5

STS8DN6LF6AG Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTS8DN6LF6AG 60 V 24 m 8 A 3.2 W AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic l

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Keywords - STS8DN3LLH5 MOSFET datasheet

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