STS9D8NH3LL Specs and Replacement
Type Designator: STS9D8NH3LL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 147 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO8
STS9D8NH3LL substitution
- MOSFET ⓘ Cross-Reference Search
STS9D8NH3LL datasheet
sts9d8nh3ll.pdf
STS9D8NH3LL Dual N-channel 30 V - 0.012 - 9 A - SO-8 low on-resistance STripFET Power MOSFET Features Type VDSS RDS(on) Qg ID Q1 30V ... See More ⇒
Detailed specifications: STS5NF60L, STS5PF30L, STS6NF20V, STS7NF60L, STS7PF30L, STS8C5H30L, STS8DN3LLH5, STS8DNF3LL, AON7403, STS9NF30L, STS9NF3LL, STT3PF20V, STU10NM60N, STU11NM60ND, STU12N65M5, STU150N3LLH6, STU16N65M5
Keywords - STS9D8NH3LL MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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