STT3PF20V MOSFET Datasheet: P-Ch, 20V, 2.2A. Full specification with pinout and replacement list

STT3PF20V Specs and Replacement

   Type Designator: STT3PF20V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT236L

STT3PF20V substitution

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STT3PF20V datasheet

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STT3PF20V P-CHANNEL 20V - 0.14 - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STT3PF20V TYPICAL RDS(on) = 0.14 (@4.5V) TYPICAL RDS(on) = 0.20 (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single ... See More ⇒

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STT3PF30L P-CHANNEL 30V - 0.14 - 3A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STT3PF30L 30 V ... See More ⇒

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STT3P2UH7 P-channel 20 V, 0.087 typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description SOT23-6L This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structu... See More ⇒

Detailed specifications: STS7NF60L , STS7PF30L , STS8C5H30L , STS8DN3LLH5 , STS8DNF3LL , STS9D8NH3LL , STS9NF30L , STS9NF3LL , RU7088R , STU10NM60N , STU11NM60ND , STU12N65M5 , STU150N3LLH6 , STU16N65M5 , STU27N3LH5 , STU2N62K3 , STU2NK100Z .