STT3PF20V
MOSFET. Datasheet pdf. Equivalent
Type Designator: STT3PF20V
Marking Code: STP2
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.5
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 87
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package: SOT236L
STT3PF20V
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STT3PF20V
Datasheet (PDF)
..1. Size:332K st
stt3pf20v.pdf
STT3PF20VP-CHANNEL 20V - 0.14 - 2.2A SOT23-6L2.7-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTT3PF20V TYPICAL RDS(on) = 0.14 (@4.5V) TYPICAL RDS(on) = 0.20 (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLYSOT23-6LDESCRIPTIONThis Power MOSFET is the latest development ofSTMicroelectronis unique "Single
8.1. Size:181K st
stt3pf30l.pdf
STT3PF30LP-CHANNEL 30V - 0.14 - 3A SOT23-6LSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTT3PF30L 30 V
9.1. Size:543K st
stt3p2uh7.pdf
STT3P2UH7 P-channel 20 V, 0.087 typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description SOT23-6LThis P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structu
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