STV250N55F3 Specs and Replacement

Type Designator: STV250N55F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: POWERSO10

STV250N55F3 substitution

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STV250N55F3 datasheet

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STV250N55F3

STV250N55F3 N-channel 55 V, 1.5 m , 250 A, PowerSO-10 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 10 STV250N55F3 55 V ... See More ⇒

Detailed specifications: STU85N3LH5, STU8N65M5, STU8NM50N, STU8NM60ND, STU90N4F3, STU95N2LH5, STU95N3LLH6, STV240N75F3, IRFP250N, STV270N4F3, STV300NH02L, STW10NK60Z, STW10NK80Z, STW11NK100Z, STW11NK90Z, STW11NM80, STW120NF10

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