STV250N55F3 Datasheet and Replacement
Type Designator: STV250N55F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: POWERSO10
STV250N55F3 substitution
STV250N55F3 Datasheet (PDF)
stv250n55f3.pdf

STV250N55F3N-channel 55 V, 1.5 m, 250 A, PowerSO-10STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID max10STV250N55F3 55 V
Datasheet: STU85N3LH5 , STU8N65M5 , STU8NM50N , STU8NM60ND , STU90N4F3 , STU95N2LH5 , STU95N3LLH6 , STV240N75F3 , STP75NF75 , STV270N4F3 , STV300NH02L , STW10NK60Z , STW10NK80Z , STW11NK100Z , STW11NK90Z , STW11NM80 , STW120NF10 .
History: SVF7N80K
Keywords - STV250N55F3 MOSFET datasheet
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History: SVF7N80K



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