All MOSFET. STV250N55F3 Datasheet

 

STV250N55F3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STV250N55F3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 250 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: POWERSO10

 STV250N55F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STV250N55F3 Datasheet (PDF)

 ..1. Size:527K  st
 stv250n55f3.pdf

STV250N55F3 STV250N55F3

STV250N55F3N-channel 55 V, 1.5 m, 250 A, PowerSO-10STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID max10STV250N55F3 55 V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: NCE2333Y | 2SK789

 

 
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