All MOSFET. STV300NH02L Datasheet

 

STV300NH02L Datasheet and Replacement


   Type Designator: STV300NH02L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 280 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 275 nS
   Cossⓘ - Output Capacitance: 3251 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: POWERSO10
 

 STV300NH02L substitution

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STV300NH02L Datasheet (PDF)

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STV300NH02L

STV300NH02LN-channel 24V - 0.8m - 280A - PowerSO-10STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTV300NH02L 24V 0.001 280A10 RDS(on)*Qg industrys benchmark1 Conduction losses reduced PowerSO-10 Low profile, very low parasitic inductance Switching losses reducedApplicationsFigure 1. Internal schematic diagram Switching applications

Datasheet: STU8NM50N , STU8NM60ND , STU90N4F3 , STU95N2LH5 , STU95N3LLH6 , STV240N75F3 , STV250N55F3 , STV270N4F3 , K3569 , STW10NK60Z , STW10NK80Z , STW11NK100Z , STW11NK90Z , STW11NM80 , STW120NF10 , STW12N120K5 , STW12NK60Z .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - STV300NH02L MOSFET datasheet

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