All MOSFET. STW11NK100Z Datasheet

 

STW11NK100Z Datasheet and Replacement


   Type Designator: STW11NK100Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.38 Ohm
   Package: TO247
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STW11NK100Z Datasheet (PDF)

 ..1. Size:315K  st
 stw11nk100z.pdf pdf_icon

STW11NK100Z

STW11NK100ZSTW11NK100ZN-channel 1000V - 1.1 - 8.3A - TO-247Zener - Protected SuperMESH PowerMOSFETGeneral featuresVDSS Type RDS(on) ID Pw(@Tjmax)STW11NK100Z 1000 V

 7.1. Size:241K  st
 stw11nk90z.pdf pdf_icon

STW11NK100Z

STW11NK90ZN-channel 900V - 0.82 - 9.2A - TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTW11NK90Z 900V

 8.1. Size:191K  st
 stw11nb80.pdf pdf_icon

STW11NK100Z

STW11NB80N-CHANNEL 800V - 0.65 - 11A - T0-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW11NB80 800 V

 8.2. Size:943K  st
 stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf pdf_icon

STW11NK100Z

STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V

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History: STW13NK100Z | STV60N06 | CEM2281 | AP50T10GS | STV4NA80 | AP4P016P | STV55N05L

Keywords - STW11NK100Z MOSFET datasheet

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