STW11NK100Z MOSFET Datasheet: N-Ch, 1000V, 8.3A. Full specification with pinout and replacement list

STW11NK100Z Specs and Replacement

Type Designator: STW11NK100Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.38 Ohm

Package: TO247

STW11NK100Z substitution

- MOSFET ⓘ Cross-Reference Search

STW11NK100Z datasheet

..1. Size:315K st
stw11nk100z.pdf pdf_icon

STW11NK100Z STW11NK100Z N-channel 1000V - 1.1 - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features VDSS Type RDS(on) ID Pw (@Tjmax) STW11NK100Z 1000 V ... See More ⇒

7.1. Size:241K st
stw11nk90z.pdf pdf_icon

STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STW11NK90Z 900V ... See More ⇒

8.1. Size:191K st
stw11nb80.pdf pdf_icon

STW11NB80 N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW11NB80 800 V ... See More ⇒

8.2. Size:943K st
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf pdf_icon

STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features RDS(on) Type VDSS RDS(on)*Qg ID max 3 1 3 STB11NM80 2 D PAK 1 STF11NM80 TO-247 800 V ... See More ⇒