STW11NM80 Specs and Replacement
Type Designator: STW11NM80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO247
STW11NM80 substitution
- MOSFET ⓘ Cross-Reference Search
STW11NM80 datasheet
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf
STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features RDS(on) Type VDSS RDS(on)*Qg ID max 3 1 3 STB11NM80 2 D PAK 1 STF11NM80 TO-247 800 V ... See More ⇒
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET in D PAK, TO-220FP, I PAK, TO-220, TO-247 Features RDS(on) Order codes VDSS RDS(on)*Qg ID max 3 3 1 2 STB11NM80 1 D PAK TO-220FP STF11NM80 STI11NM80 800 V ... See More ⇒
stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf
STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@TJmax) Max 3 2 3 1 2 STI11NM65N 710 V ... See More ⇒
stw11nb80.pdf
STW11NB80 N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW11NB80 800 V ... See More ⇒
Detailed specifications: STV240N75F3, STV250N55F3, STV270N4F3, STV300NH02L, STW10NK60Z, STW10NK80Z, STW11NK100Z, STW11NK90Z, IRF9540N, STW120NF10, STW12N120K5, STW12NK60Z, STW12NK80Z, STW12NK90Z, STW12NK95Z, STW13N95K3, STW13NK100Z
Keywords - STW11NM80 MOSFET specs
STW11NM80 cross reference
STW11NM80 equivalent finder
STW11NM80 pdf lookup
STW11NM80 substitution
STW11NM80 replacement
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