STW20NM50FD Datasheet and Replacement
Type Designator: STW20NM50FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 38 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO247
STW20NM50FD substitution
STW20NM50FD Datasheet (PDF)
stw20nm50fd.pdf

STW20NM50FDN-CHANNEL 500V - 0.22 - 20A TO-247FDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTW20NM50FD 500V
stw20nm50fd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM50FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)
stw20nm50.pdf

STW20NM50N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247MDmesh MOSFETTYPE VDSS RDS(on) ID(@Tjmax)STW20NM50 550V
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 3SK179 | FDP025N06 | 2SJ661-DL-1E | IRFS230
Keywords - STW20NM50FD MOSFET datasheet
STW20NM50FD cross reference
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History: 3SK179 | FDP025N06 | 2SJ661-DL-1E | IRFS230



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