All MOSFET. STW27NM60ND Datasheet

 

STW27NM60ND Datasheet and Replacement


   Type Designator: STW27NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247
 

 STW27NM60ND substitution

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STW27NM60ND Datasheet (PDF)

 ..1. Size:519K  st
 stb27nm60nd stw27nm60nd.pdf pdf_icon

STW27NM60ND

STB27NM60ND, STW27NM60NDAutomotive-grade N-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeatures Order codes VDS@ Tjmax RDS(on) max IDSTB27NM60NDTAB650 V 0.16 21 ASTW27NM60ND Designed for automotive applications and 3 321AEC-Q101 qualified1D2PAK The worldwide best RDS

 ..2. Size:443K  st
 stw27nm60nd.pdf pdf_icon

STW27NM60ND

STW27NM60NDN-channel 600 V, 0.13 , 21 A TO-247FDmesh Power MOSFET (with fast diode)Preliminary DataFeaturesVDSS @ RDS(on) Type IDTJMAX maxSTW27NM60ND 650 V

Datasheet: STW23NM60ND , STW24NK55Z , STW24NM60N , STW24NM65N , STW25N95K3 , STW25NM60ND , STW26NM50 , STW26NM60N , IRFB31N20D , STW28NM50N , STW30N65M5 , STW30NF20 , STW30NM50N , STW32N55M5 , STW32N65M5 , STW34NB20 , STW34NM60N .

History: IXFH75N10Q | RQ6E030AT

Keywords - STW27NM60ND MOSFET datasheet

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