STW4N150 Datasheet and Replacement
Type Designator: STW4N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: TO247
STW4N150 substitution
STW4N150 Datasheet (PDF)
stfw4n150 stp4n150 stw4n150.pdf

STFW4N150STP4N150, STW4N150N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesType VDSS RDS(on) max ID PwSTFW4N150 1500 V
stw4n150.pdf

isc N-Channel MOSFET Transistor STW4N150FEATURESDrain Current I 4.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC convert
Datasheet: STW43NM60N , STW43NM60ND , STW45NM50 , STW45NM50FD , STW45NM60 , STW45NM60D , STW47NM60ND , STW48NM60N , IRFP064N , STW52NK25Z , STW54NM65ND , STW55NM60ND , STW56NM60N , STW58NM60N , STW5NK100Z , STW60N65M5 , STW62NM60N .
Keywords - STW4N150 MOSFET datasheet
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