STW54NM65ND Datasheet and Replacement
Type Designator: STW54NM65ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 49 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 218 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO247
- MOSFET Cross-Reference Search
STW54NM65ND Datasheet (PDF)
stw54nm65nd.pdf

STW54NM65NDN-channel 650 V, 0.055 , 49 A TO-247FDmesh II Power MOSFET (with fast diode)FeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STW54NM65ND 710 V
stw54nk30z.pdf

STW54NK30ZN-CHANNEL 300V - 0.052 - 54A TO-247Zener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE BVDSS RDS(on) ID PwSTW54NK30Z 300 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF298L | SUD80460E | 2N4118A
Keywords - STW54NM65ND MOSFET datasheet
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History: AOTF298L | SUD80460E | 2N4118A



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