All MOSFET. STW55NM60ND Datasheet

 

STW55NM60ND Datasheet and Replacement


   Type Designator: STW55NM60ND
   Marking Code: 55NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 190 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO247
 

 STW55NM60ND substitution

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STW55NM60ND Datasheet (PDF)

 ..1. Size:297K  st
 stw55nm60nd.pdf pdf_icon

STW55NM60ND

STW55NM60NDN-channel 600 V - 0.047 - 51 A TO-247FDmesh II Power MOSFET (with fast diode)FeaturesVDSS RDS(on) Type ID(@TJmax) (max)STW55NM60ND 650 V

 4.1. Size:329K  st
 stw55nm60n.pdf pdf_icon

STW55NM60ND

STW55NM60NN-channel 600 V, 0.047 , 51 A, MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW55NM60N 650 V

 7.1. Size:350K  st
 stw55nm50n.pdf pdf_icon

STW55NM60ND

STW55NM50NN-channel 500 V, 0.040 , 54 A, MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW55NM50N 550 V

 8.1. Size:334K  1
 sth55n10 sth55n10fi stw55n10.pdf pdf_icon

STW55NM60ND

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