STW58NM60N Datasheet and Replacement
Type Designator: STW58NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO247
STW58NM60N substitution
STW58NM60N Datasheet (PDF)
stw58nm60n.pdf
STW58NM60NN-channel 600 V, 0.05 , 45 A TO-247MDmesh II Power MOSFETPreliminary dataFeaturesRDS(on) Order code VDSS IDmaxSTW58NM60N 600 V
Datasheet: STW45NM60D , STW47NM60ND , STW48NM60N , STW4N150 , STW52NK25Z , STW54NM65ND , STW55NM60ND , STW56NM60N , 20N60 , STW5NK100Z , STW60N65M5 , STW62NM60N , STW6N120K3 , STW6N95K5 , STW70N10F4 , STW75NF20 , STW75NF30 .
History: FKV660S | IRC830PBF | AP2612GY-HF
Keywords - STW58NM60N MOSFET datasheet
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History: FKV660S | IRC830PBF | AP2612GY-HF
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