STW60N65M5 Datasheet and Replacement
Type Designator: STW60N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 141 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: TO247
STW60N65M5 substitution
STW60N65M5 Datasheet (PDF)
stw60n65m5 stfw60n65m5.pdf
STW60N65M5STFW60N65M5N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFETin TO-247, TO-3PFFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTFW60N65M5111710 V
stw60ne10.pdf
STW60NE10N - CHANNEL 100V - 0.016 - 60A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW60NE10 100 V
stw60nm50n.pdf
STW60NM50NN-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDSS (@Tjmax) RDS(on) max IDSTW60NM50N 550 V
stw60n10.pdf
STH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH60N10 100 V
Datasheet: STW48NM60N , STW4N150 , STW52NK25Z , STW54NM65ND , STW55NM60ND , STW56NM60N , STW58NM60N , STW5NK100Z , IRF540N , STW62NM60N , STW6N120K3 , STW6N95K5 , STW70N10F4 , STW75NF20 , STW75NF30 , STW77N65M5 , STW7N95K3 .
History: HY1707P | AM1420N | MTB02N03H8 | 2SK3058-ZJ | AP2N1K2EN1 | RDX080N50FU6 | SSW65R090S2
Keywords - STW60N65M5 MOSFET datasheet
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History: HY1707P | AM1420N | MTB02N03H8 | 2SK3058-ZJ | AP2N1K2EN1 | RDX080N50FU6 | SSW65R090S2
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