APT40M75JN Specs and Replacement

Type Designator: APT40M75JN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 1320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT227

APT40M75JN substitution

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APT40M75JN datasheet

 ..1. Size:62K  apt
 apt40m75jn.pdf pdf_icon

APT40M75JN

D G APT40M75JN 400V 56.0A 0.075 S APT40M90JN 400V 51.0A 0.090 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 40M75JN 40M90JN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Dr... See More ⇒

 7.1. Size:62K  apt
 apt40m70lvr.pdf pdf_icon

APT40M75JN

APT40M70LVR 400V 57A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe... See More ⇒

 7.2. Size:69K  apt
 apt40m70jvr.pdf pdf_icon

APT40M75JN

APT40M70JVR 400V 53A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒

 7.3. Size:70K  apt
 apt40m70jvfr.pdf pdf_icon

APT40M75JN

APT40M70JVFR 400V 53A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster... See More ⇒

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Detailed specifications: APT4020BN, APT4020BVR, APT4030CNR, APT40M35JVR, APT40M35PVR, APT40M42JN, APT40M70JVR, APT40M70LVR, STP75NF75, APT40M82WVR, APT5010B2VFR, APT5010B2VR, APT5010JN, APT5010JVFR, APT5010JVR, APT5010LVFR, APT5010LVR

Keywords - APT40M75JN MOSFET specs

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