STY60NK30Z Datasheet and Replacement
Type Designator: STY60NK30Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 1070 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: MAX247
STY60NK30Z substitution
STY60NK30Z Datasheet (PDF)
sty60nk30z.pdf

STY60NK30ZN-CHANNEL 300V - 0.033 - 60A Max247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTY60NK30Z 300 V
sty60nm60.pdf

STY60NM60N-CHANNEL 600V - 0.050 - 60A Max247Zener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTY60NM60 600V
sty60na20.pdf

STY60NA20 N - CHANNEL 200V - 0.030 - 60 A - Max247FAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTY60NA20 200 V
sty60nm50.pdf

STY60NM50N-CHANNEL 500V - 0.045 - 60A Max247Zener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTY60NM50 500V
Datasheet: STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , STY112N65M5 , STY130NF20D , STY140NS10 , STY30NK90Z , 2SK3878 , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G .
History: IPB80N06S2L-11 | SI8410DB | AP30T10GK
Keywords - STY60NK30Z MOSFET datasheet
STY60NK30Z cross reference
STY60NK30Z equivalent finder
STY60NK30Z lookup
STY60NK30Z substitution
STY60NK30Z replacement
History: IPB80N06S2L-11 | SI8410DB | AP30T10GK



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