STY60NM50 Specs and Replacement
Type Designator: STY60NM50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 980 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: MAX247
STY60NM50 substitution
- MOSFET ⓘ Cross-Reference Search
STY60NM50 datasheet
sty60nm50.pdf
STY60NM50 N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STY60NM50 500V ... See More ⇒
sty60nm60.pdf
STY60NM60 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V ... See More ⇒
sty60na20.pdf
STY60NA20 N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STY60NA20 200 V ... See More ⇒
sty60nk30z.pdf
STY60NK30Z N-CHANNEL 300V - 0.033 - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STY60NK30Z 300 V ... See More ⇒
Detailed specifications: STW9N150, STW9NK70Z, STW9NK90Z, STY112N65M5, STY130NF20D, STY140NS10, STY30NK90Z, STY60NK30Z, 7N65, STY60NM60, STY80NM60N, STZ150NF55T, BSB012N03LX3G, BSB012NE2LX, BSB014N04LX3G, BSB015N04NX3G, BSB017N03LX3G
Keywords - STY60NM50 MOSFET specs
STY60NM50 cross reference
STY60NM50 equivalent finder
STY60NM50 pdf lookup
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STY60NM50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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