STY60NM60 MOSFET Datasheet: N-Ch, 600V, 60A. Full specification with pinout and replacement list

STY60NM60 Specs and Replacement

Type Designator: STY60NM60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: MAX247

STY60NM60 substitution

- MOSFET ⓘ Cross-Reference Search

..1. Size:291K st
sty60nm60.pdf pdf_icon

STY60NM60 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V ... See More ⇒

7.1. Size:283K st
sty60nm50.pdf pdf_icon

STY60NM50 N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STY60NM50 500V ... See More ⇒

8.1. Size:35K st
sty60na20.pdf pdf_icon

STY60NA20 N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STY60NA20 200 V ... See More ⇒

8.2. Size:190K st
sty60nk30z.pdf pdf_icon

STY60NK30Z N-CHANNEL 300V - 0.033 - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STY60NK30Z 300 V ... See More ⇒

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