BSB024N03LXG Datasheet and Replacement
Type Designator: BSB024N03LXG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: WDSON2
BSB024N03LXG substitution
BSB024N03LXG Datasheet (PDF)
bsb028n06nn3g.pdf

BSB028N06NN3 G OptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized technology for DC/DC convertersRDS(on),max 2.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Superior thermal resistanceCanPAKTM M Dual sided coolingMG-WDSON-2 low parasitic inductance Low profile (
bsb028n06nn3.pdf

n-Channel Power MOSFETOptiMOSBSB028N06NN3 Data Sheet1.4, 2011-05-27Preliminary Industrial & MultimarketOptiMOS Power-MOSFETBSB028N06NN3 G1 DescriptionOptiMOS60V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages m
Datasheet: STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , 5N60 , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS , BSC011N03LS , BSC014N03LSG , BSC014N03MSG , BSC016N03LSG , BSC016N03MSG .
History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV
Keywords - BSB024N03LXG MOSFET datasheet
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History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV



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