BSB024N03LXG MOSFET Datasheet: N-Ch, 30V, 27A. Full specification with pinout and replacement list

BSB024N03LXG Specs and Replacement

Type Designator: BSB024N03LXG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: WDSON2

BSB024N03LXG substitution

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BSB024N03LXG datasheet

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& " + $ !#& ' $>E Features 0 V DS T +5 9E88 C?4G... See More ⇒

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BSB028N06NN3 G OptiMOS 3 Power-MOSFET Product Summary Features VDS 60 V Optimized technology for DC/DC converters RDS(on),max 2.8 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Superior thermal resistance CanPAKTM M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (... See More ⇒

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n-Channel Power MOSFET OptiMOS BSB028N06NN3 Data Sheet 1.4, 2011-05-27 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSB028N06NN3 G 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages m... See More ⇒

Detailed specifications: STY80NM60N, STZ150NF55T, BSB012N03LX3G, BSB012NE2LX, BSB014N04LX3G, BSB015N04NX3G, BSB017N03LX3G, BSB019N03LXG, IRLB4132, BSB028N06NN3G, BSB053N03LPG, BSC010NE2LS, BSC011N03LS, BSC014N03LSG, BSC014N03MSG, BSC016N03LSG, BSC016N03MSG