All MOSFET. BSB024N03LXG Datasheet

 

BSB024N03LXG Datasheet and Replacement


   Type Designator: BSB024N03LXG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: WDSON2
 

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BSB024N03LXG Datasheet (PDF)

 ..1. Size:550K  infineon
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BSB024N03LXG

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 9.1. Size:743K  infineon
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BSB024N03LXG

BSB028N06NN3 G OptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized technology for DC/DC convertersRDS(on),max 2.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Superior thermal resistanceCanPAKTM M Dual sided coolingMG-WDSON-2 low parasitic inductance Low profile (

 9.2. Size:1584K  infineon
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BSB024N03LXG

n-Channel Power MOSFETOptiMOSBSB028N06NN3 Data Sheet1.4, 2011-05-27Preliminary Industrial & MultimarketOptiMOS Power-MOSFETBSB028N06NN3 G1 DescriptionOptiMOS60V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages m

Datasheet: STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , IRLB4132 , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS , BSC011N03LS , BSC014N03LSG , BSC014N03MSG , BSC016N03LSG , BSC016N03MSG .

Keywords - BSB024N03LXG MOSFET datasheet

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