BSB028N06NN3G MOSFET Datasheet: N-Ch, 60V, 22A. Full specification with pinout and replacement list

BSB028N06NN3G Specs and Replacement

Type Designator: BSB028N06NN3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: WDSON2

BSB028N06NN3G substitution

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BSB028N06NN3G datasheet

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BSB028N06NN3 G OptiMOS 3 Power-MOSFET Product Summary Features VDS 60 V Optimized technology for DC/DC converters RDS(on),max 2.8 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Superior thermal resistance CanPAKTM M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (... See More ⇒

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n-Channel Power MOSFET OptiMOS BSB028N06NN3 Data Sheet 1.4, 2011-05-27 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSB028N06NN3 G 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages m... See More ⇒

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