BSB028N06NN3G Datasheet and Replacement
Type Designator: BSB028N06NN3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 2100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: WDSON2
BSB028N06NN3G substitution
BSB028N06NN3G Datasheet (PDF)
bsb028n06nn3g.pdf

BSB028N06NN3 G OptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized technology for DC/DC convertersRDS(on),max 2.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Superior thermal resistanceCanPAKTM M Dual sided coolingMG-WDSON-2 low parasitic inductance Low profile (
bsb028n06nn3.pdf

n-Channel Power MOSFETOptiMOSBSB028N06NN3 Data Sheet1.4, 2011-05-27Preliminary Industrial & MultimarketOptiMOS Power-MOSFETBSB028N06NN3 G1 DescriptionOptiMOS60V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages m
Datasheet: STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG , AO3400 , BSB053N03LPG , BSC010NE2LS , BSC011N03LS , BSC014N03LSG , BSC014N03MSG , BSC016N03LSG , BSC016N03MSG , BSC016N04LSG .
History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ
Keywords - BSB028N06NN3G MOSFET datasheet
BSB028N06NN3G cross reference
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History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ



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