All MOSFET. BSB028N06NN3G Datasheet

 

BSB028N06NN3G Datasheet and Replacement


   Type Designator: BSB028N06NN3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: WDSON2
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BSB028N06NN3G Datasheet (PDF)

 ..1. Size:743K  infineon
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BSB028N06NN3G

BSB028N06NN3 G OptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized technology for DC/DC convertersRDS(on),max 2.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Superior thermal resistanceCanPAKTM M Dual sided coolingMG-WDSON-2 low parasitic inductance Low profile (

 2.1. Size:1584K  infineon
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BSB028N06NN3G

n-Channel Power MOSFETOptiMOSBSB028N06NN3 Data Sheet1.4, 2011-05-27Preliminary Industrial & MultimarketOptiMOS Power-MOSFETBSB028N06NN3 G1 DescriptionOptiMOS60V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages m

 9.1. Size:550K  infineon
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BSB028N06NN3G

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSD13302W | AP30H80Q | R6006JND3 | 1N70Z | PDD0906 | BSZ063N04LS6 | 2SJ529S

Keywords - BSB028N06NN3G MOSFET datasheet

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