All MOSFET. BSB053N03LPG Datasheet

 

BSB053N03LPG Datasheet and Replacement


   Type Designator: BSB053N03LPG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: WDSON2
 

 BSB053N03LPG substitution

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BSB053N03LPG Datasheet (PDF)

 3.1. Size:561K  infineon
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BSB053N03LPG

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 9.1. Size:1665K  infineon
bsb056n10nn3g.pdf pdf_icon

BSB053N03LPG

n-Channel Power MOSFETOptiMOSBSB056N10NN3 G Data Sheet2.5, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB056N10NN3 G1 DescriptionOptiMOS100V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

Datasheet: BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG , BSB028N06NN3G , SPP20N60C3 , BSC010NE2LS , BSC011N03LS , BSC014N03LSG , BSC014N03MSG , BSC016N03LSG , BSC016N03MSG , BSC016N04LSG , BSC017N04NSG .

History: RTR040N03TL | OSG65R099TT3ZF | BLF645 | LSB65R380HT | BUK9535-100A | TSJ10N10AT | IXTH30N50L2

Keywords - BSB053N03LPG MOSFET datasheet

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