BSB053N03LPG Specs and Replacement
Type Designator: BSB053N03LPG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: WDSON2
BSB053N03LPG substitution
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BSB053N03LPG datasheet
bsb053n03lp.pdf
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bsb056n10nn3g.pdf
n-Channel Power MOSFET OptiMOS BSB056N10NN3 G Data Sheet 2.5, 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make... See More ⇒
Detailed specifications: BSB012N03LX3G, BSB012NE2LX, BSB014N04LX3G, BSB015N04NX3G, BSB017N03LX3G, BSB019N03LXG, BSB024N03LXG, BSB028N06NN3G, K3569, BSC010NE2LS, BSC011N03LS, BSC014N03LSG, BSC014N03MSG, BSC016N03LSG, BSC016N03MSG, BSC016N04LSG, BSC017N04NSG
Keywords - BSB053N03LPG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BSC018N04LSG | RUH3051M
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