BSC022N03SG MOSFET Datasheet: N-Ch, 30V, 28A. Full specification with pinout and replacement list

BSC022N03SG Specs and Replacement

Type Designator: BSC022N03SG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 2210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TDSON8

BSC022N03SG substitution

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BSC022N03SG datasheet

4.1. Size:631K infineon
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% ! % D # A0... See More ⇒

6.1. Size:586K infineon
bsc022n04ls.pdf pdf_icon

BSC022N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 33 nC Superior thermal resistance QG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

6.2. Size:1586K infineon
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BSC022N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2 ... See More ⇒

Detailed specifications: BSC017N04NSG, BSC018N04LSG, BSC018NE2LS, BSC019N02KSG, BSC019N04NSG, BSC020N025SG, BSC020N03LSG, BSC020N03MSG, AON7506, BSC024NE2LS, BSC025N03LSG, BSC025N03MSG, BSC026N02KSG, BSC027N04LSG, BSC028N06LS3G, BSC030N03LSG, BSC030N03MSG