All MOSFET. BSC022N03SG Datasheet

 

BSC022N03SG Datasheet and Replacement


   Type Designator: BSC022N03SG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TDSON8
 

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BSC022N03SG Datasheet (PDF)

 4.1. Size:631K  infineon
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BSC022N03SG

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 6.1. Size:586K  infineon
 bsc022n04ls.pdf pdf_icon

BSC022N03SG

BSC022N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

 6.2. Size:1586K  infineon
 bsc022n04ls6.pdf pdf_icon

BSC022N03SG

BSC022N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

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Datasheet: BSC017N04NSG , BSC018N04LSG , BSC018NE2LS , BSC019N02KSG , BSC019N04NSG , BSC020N025SG , BSC020N03LSG , BSC020N03MSG , IRFP250 , BSC024NE2LS , BSC025N03LSG , BSC025N03MSG , BSC026N02KSG , BSC027N04LSG , BSC028N06LS3G , BSC030N03LSG , BSC030N03MSG .

History: BLA1011S-200R | AON7262E | RU1H190S | HFP9N50 | NVMFS5C628NL | IRFS9541 | IXTH1R4N250P3

Keywords - BSC022N03SG MOSFET datasheet

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