All MOSFET. BSC022N03SG Datasheet

 

BSC022N03SG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC022N03SG
   Marking Code: 22N03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TDSON8

 BSC022N03SG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC022N03SG Datasheet (PDF)

 4.1. Size:631K  infineon
 bsc022n03s.pdf

BSC022N03SG BSC022N03SG

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 6.1. Size:586K  infineon
 bsc022n04ls.pdf

BSC022N03SG BSC022N03SG

BSC022N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

 6.2. Size:1586K  infineon
 bsc022n04ls6.pdf

BSC022N03SG BSC022N03SG

BSC022N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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