BSC030N03MSG Datasheet and Replacement
Type Designator: BSC030N03MSG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TDSON8
- MOSFET Cross-Reference Search
BSC030N03MSG Datasheet (PDF)
bsc030n03msg.pdf

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bsc030n03ms.pdf

BSC030N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 3mDS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8GSI 100 A 100% avalanche tested DPG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product
bsc030n03ls .pdf

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bsc030n03lsg.pdf

BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SJMN600R70ZD | R6006JND3 | 1N70Z | AP30H80Q | 13N50G-TA3-T | IRF60DM206 | VS7N65AF
Keywords - BSC030N03MSG MOSFET datasheet
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History: SJMN600R70ZD | R6006JND3 | 1N70Z | AP30H80Q | 13N50G-TA3-T | IRF60DM206 | VS7N65AF



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