BSC030N03MSG PDF and Equivalents Search

 

BSC030N03MSG Specs and Replacement

Type Designator: BSC030N03MSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TDSON8

BSC030N03MSG substitution

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BSC030N03MSG datasheet

 ..1. Size:543K  infineon
bsc030n03msg.pdf pdf_icon

BSC030N03MSG

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 3.1. Size:195K  infineon
bsc030n03ms.pdf pdf_icon

BSC030N03MSG

BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 3 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8 GS I 100 A 100% avalanche tested D PG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product ... See More ⇒

 5.1. Size:687K  infineon
bsc030n03ls .pdf pdf_icon

BSC030N03MSG

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 5.2. Size:384K  infineon
bsc030n03lsg.pdf pdf_icon

BSC030N03MSG

BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒

Detailed specifications: BSC022N03SG, BSC024NE2LS, BSC025N03LSG, BSC025N03MSG, BSC026N02KSG, BSC027N04LSG, BSC028N06LS3G, BSC030N03LSG, IRF1407, BSC030N04NSG, BSC030P03NS3G, BSC031N06NS3G, BSC032N03SG, BSC034N03LSG, BSC035N04LSG, BSC042N03LSG, BSC042N03MSG

Keywords - BSC030N03MSG MOSFET specs

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 BSC030N03MSG replacement

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