BSC032N03SG Specs and Replacement
Type Designator: BSC032N03SG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TDSON8
BSC032N03SG substitution
- MOSFET ⓘ Cross-Reference Search
BSC032N03SG datasheet
bsc032n04ls.pdf
BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 98 A 100% avalanche tested QOSS 22 nC Superior thermal resistance QG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8... See More ⇒
Detailed specifications: BSC026N02KSG, BSC027N04LSG, BSC028N06LS3G, BSC030N03LSG, BSC030N03MSG, BSC030N04NSG, BSC030P03NS3G, BSC031N06NS3G, RFP50N06, BSC034N03LSG, BSC035N04LSG, BSC042N03LSG, BSC042N03MSG, BSC042N03SG, BSC042NE7NS3G, BSC046N02KSG, BSC047N08NS3G
Keywords - BSC032N03SG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRFSZ44 | IPW60R120P7
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