BSC052N03SG Datasheet and Replacement
Type Designator: BSC052N03SG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 760 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TDSON8
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BSC052N03SG Datasheet (PDF)
bsc052n03ls.pdf
n-Channel Power MOSFETOptiMOSBSC052N03LS Data Sheet2.1, 2011-09-23Final Industrial & MultimarketOptiMOS Power-MOSFETBSC052N03LS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS
bsc052n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC052N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC052N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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History: 2SK1571 | IRF7473
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