BSC052N03SG Specs and Replacement
Type Designator: BSC052N03SG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 760 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TDSON8
BSC052N03SG substitution
- MOSFET ⓘ Cross-Reference Search
BSC052N03SG datasheet
bsc052n03ls.pdf
n-Channel Power MOSFET OptiMOS BSC052N03LS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC052N03LS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS... See More ⇒
bsc052n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re... See More ⇒
Detailed specifications: BSC042NE7NS3G, BSC046N02KSG, BSC047N08NS3G, BSC050N03LSG, BSC050N03MSG, BSC050N04LSG, BSC050NE2LS, BSC052N03LS, IRFB31N20D, BSC054N04NSG, BSC057N03LSG, BSC057N03MSG, BSC057N08NS3G, BSC059N03SG, BSC059N04LSG, BSC060N10NS3G, BSC060P03NS3EG
Keywords - BSC052N03SG MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPW60R120P7
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