All MOSFET. BSC079N10NSG Datasheet

 

BSC079N10NSG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC079N10NSG
   Marking Code: 079N10NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TDSON8

 BSC079N10NSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC079N10NSG Datasheet (PDF)

 ..1. Size:661K  infineon
 bsc079n10ns5 bsc079n10nsg.pdf

BSC079N10NSG BSC079N10NSG

% ! !% D #:A0

 7.1. Size:342K  infineon
 bsc079n03s.pdf

BSC079N10NSG BSC079N10NSG

BSC079N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for notebook DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel Logic levelP-TDSON-8P-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resi

 7.2. Size:380K  infineon
 bsc079n03sg.pdf

BSC079N10NSG BSC079N10NSG

BSC079N03S GProduct SummaryOptiMOS2 Power-TransistorFeatures V 30 VDSR 7.9 Fast switching MOSFET for SMPS mDS(on),maxI 40 A Optimized technology for notebook DC/DC convertersD Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 7.3. Size:384K  infineon
 bsc079n03lscg.pdf

BSC079N10NSG BSC079N10NSG

BSC079N03LSC GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Improved switching behaviourPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very l

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History: FQP44N10

 

 
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