BSC159N10LSFG Specs and Replacement
Type Designator: BSC159N10LSFG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 470 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0159 Ohm
Package: TDSON8
BSC159N10LSFG substitution
- MOSFET ⓘ Cross-Reference Search
BSC159N10LSFG datasheet
bsc159n10lsf9 bsc159n10lsfg.pdf
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bsc155n06nd.pdf
BSC155N06ND MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel,Normal Level Fast switching MOSFETs 175 C operating temperature Green product (RoHS compliant) 1 8 2 7 100% Avalanche tested 3 6 5 4 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis... See More ⇒
bsc150n03ld.pdf
BSC150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on... See More ⇒
Detailed specifications: BSC120N03LSG, BSC120N03MSG, BSC123N08NS3G, BSC123N10LSG, BSC12DN20NS3G, BSC130P03LSG, BSC150N03LDG, BSC152N10NSFG, 7N65, BSC160N10NS3G, BSC16DN25NS3G, BSC190N12NS3G, BSC190N15NS3G, BSC196N10NSG, BSC200P03LSG, BSC205N10LSG, BSC22DN20NS3G
Keywords - BSC159N10LSFG MOSFET specs
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BSC159N10LSFG replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FTU36N06N | MMDF3N04HD
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