BSC190N12NS3G Specs and Replacement
Type Designator: BSC190N12NS3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TDSON8
BSC190N12NS3G substitution
- MOSFET ⓘ Cross-Reference Search
BSC190N12NS3G datasheet
bsc190n15ns3 bsc190n15ns3g.pdf
$ $ C "9@/; %;+877+;B Features 150 V DS Q ' 381>>5?B=1... See More ⇒
Detailed specifications: BSC123N10LSG, BSC12DN20NS3G, BSC130P03LSG, BSC150N03LDG, BSC152N10NSFG, BSC159N10LSFG, BSC160N10NS3G, BSC16DN25NS3G, IRF9540, BSC190N15NS3G, BSC196N10NSG, BSC200P03LSG, BSC205N10LSG, BSC22DN20NS3G, BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG
Keywords - BSC190N12NS3G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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