BSC200P03LSG Specs and Replacement
Type Designator: BSC200P03LSG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 569 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TDSON8
BSC200P03LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC200P03LSG datasheet
bsc200p03lsg .pdf
BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 20 mW Enhancement mode ID -12.5 A Logic level 150 C operating temperature Avalanche rated PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free Lead plating RoHS compliant Type Package Mark... See More ⇒
bsc205n10ls8.pdf
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Detailed specifications: BSC150N03LDG, BSC152N10NSFG, BSC159N10LSFG, BSC160N10NS3G, BSC16DN25NS3G, BSC190N12NS3G, BSC190N15NS3G, BSC196N10NSG, STP75NF75, BSC205N10LSG, BSC22DN20NS3G, BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG, BSC320N20NS3G, BSC340N08NS3G, BSC360N15NS3G
Keywords - BSC200P03LSG MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SI2327DS
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