BSC252N10NSFG Datasheet and Replacement
Type Designator: BSC252N10NSFG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0252 Ohm
Package: TDSON8
BSC252N10NSFG substitution
BSC252N10NSFG Datasheet (PDF)
bsc252n10nsf8 bsc252n10nsfg.pdf
% ! !% D #:A0A6C2EFC6R *3 7C66 =625 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C
bsc252n10nsf.pdf
% ! !% D #:A0A6C2EFC6R *3 7C66 =625 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C
Datasheet: BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG , BSC200P03LSG , BSC205N10LSG , BSC22DN20NS3G , BSC240N12NS3G , IRLB4132 , BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G , BSC360N15NS3G , BSC440N10NS3G , BSC520N15NS3G , BSC600N25NS3G , BSC750N10NDG .
Keywords - BSC252N10NSFG MOSFET datasheet
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History: MT6JN008A | NCE0103
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