All MOSFET. BSC320N20NS3G Datasheet

 

BSC320N20NS3G Datasheet and Replacement


   Type Designator: BSC320N20NS3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TDSON8
 

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BSC320N20NS3G Datasheet (PDF)

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BSC320N20NS3G

BSC320N20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 36 AD Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal fo

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - BSC320N20NS3G MOSFET datasheet

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