BSC320N20NS3G PDF and Equivalents Search

 

BSC320N20NS3G Specs and Replacement

Type Designator: BSC320N20NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TDSON8

BSC320N20NS3G substitution

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BSC320N20NS3G datasheet

 ..1. Size:312K  infineon
bsc320n20ns3g.pdf pdf_icon

BSC320N20NS3G

BSC320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 36 A D Very low on-resistance R DS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal fo... See More ⇒

Detailed specifications: BSC190N15NS3G, BSC196N10NSG, BSC200P03LSG, BSC205N10LSG, BSC22DN20NS3G, BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG, K3569, BSC340N08NS3G, BSC360N15NS3G, BSC440N10NS3G, BSC520N15NS3G, BSC600N25NS3G, BSC750N10NDG, BSC900N20NS3G, BSD223P

Keywords - BSC320N20NS3G MOSFET specs

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