All MOSFET. BSC900N20NS3G Datasheet

 

BSC900N20NS3G Datasheet and Replacement


   Type Designator: BSC900N20NS3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TDSON8
 

 BSC900N20NS3G substitution

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BSC900N20NS3G Datasheet (PDF)

 ..1. Size:309K  infineon
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BSC900N20NS3G

TypeBSC900N20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS Optimized for dc-dc conversionR 90mDS(on),max N-channel, normal levelI 15.2 AD Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

Datasheet: BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G , BSC360N15NS3G , BSC440N10NS3G , BSC520N15NS3G , BSC600N25NS3G , BSC750N10NDG , RFP50N06 , BSD223P , BSD314SPE , BSF024N03LT3G , BSF050N03LQ3G , BSF053N03LTG , BSF083N03LQG , BSL207SP , BSL211SP .

Keywords - BSC900N20NS3G MOSFET datasheet

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