All MOSFET. BSC900N20NS3G Datasheet

 

BSC900N20NS3G Datasheet and Replacement


   Type Designator: BSC900N20NS3G
   Marking Code: 900N20NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 15.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TDSON8
 

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BSC900N20NS3G Datasheet (PDF)

 ..1. Size:309K  infineon
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BSC900N20NS3G

TypeBSC900N20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS Optimized for dc-dc conversionR 90mDS(on),max N-channel, normal levelI 15.2 AD Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - BSC900N20NS3G MOSFET datasheet

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