BSD223P MOSFET Datasheet: P-Ch, 20V, 0.39A. Full specification with pinout and replacement list

BSD223P Specs and Replacement

Type Designator: BSD223P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT363

BSD223P substitution

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BSD223P datasheet

..1. Size:99K infineon
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BSD 223P OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -20 V Dual P-Channel RDS(on) 1.2 Enhancement mode ID -0.39 A Super Logic Level (2.5 V rated) PG-SOT-363 150 C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 MOSFET1 1,2,6 Halogen-free accordin... See More ⇒

9.1. Size:34K philips
bsd22 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor BSD22 DESCRIPTION Marking code M32 Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletio... See More ⇒

Detailed specifications: BSC320N20NS3G, BSC340N08NS3G, BSC360N15NS3G, BSC440N10NS3G, BSC520N15NS3G, BSC600N25NS3G, BSC750N10NDG, BSC900N20NS3G, 12N60, BSD314SPE, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, BSF083N03LQG, BSL207SP, BSL211SP, BSL215P