BSD223P MOSFET. Datasheet pdf. Equivalent
Type Designator: BSD223P
Marking Code: X1s
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 0.39 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.5 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT363
BSD223P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSD223P Datasheet (PDF)
bsd223p.pdf
BSD 223POptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V Dual P-ChannelRDS(on) 1.2 Enhancement modeID -0.39 A Super Logic Level (2.5 V rated)PG-SOT-363 150C operating temperature4 Avalanche rated 56 dv/dt rated321VPS05604 Qualified according to AEC Q101MOSFET1: 1,2,6 Halogen-free accordin
bsd22 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSD22MOSFET N-channel depletionswitching transistorDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationMOSFET N-channel depletion switching transistor BSD22DESCRIPTION Marking code: M32Symmetrical insulated-gate siliconMOS field-effect transistor of then-channel depletio
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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