All MOSFET. BSF024N03LT3G Datasheet

 

BSF024N03LT3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSF024N03LT3G
   Marking Code: 0703'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 1730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: WDSON2

 BSF024N03LT3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSF024N03LT3G Datasheet (PDF)

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 bsf024n03lt3g.pdf

BSF024N03LT3G BSF024N03LT3G

n-Channel Power MOSFETOptiMOSBSF024N03LT3 G Data Sheet2.1, 2009-06-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSF024N03LT3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make O

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BF352

 

 
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