All MOSFET. BSF050N03LQ3G Datasheet

 

BSF050N03LQ3G Datasheet and Replacement


   Type Designator: BSF050N03LQ3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: WDSON2
 

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BSF050N03LQ3G Datasheet (PDF)

 ..1. Size:1520K  infineon
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BSF050N03LQ3G

n-Channel Power MOSFETOptiMOSBSF050N03LQ3 G Data Sheet2.2, 2009-05-11Final Industrial & MultimarketOptiMOS Power-MOSFETBSF050N03LQ3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.1. Size:563K  infineon
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BSF050N03LQ3G

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Datasheet: BSC440N10NS3G , BSC520N15NS3G , BSC600N25NS3G , BSC750N10NDG , BSC900N20NS3G , BSD223P , BSD314SPE , BSF024N03LT3G , AON7506 , BSF053N03LTG , BSF083N03LQG , BSL207SP , BSL211SP , BSL215P , BSL307SP , BSL308PE , BSL314PE .

History: HAT1097RJ | IPB34CN10N | FQD2N50TF | 2SK494 | AFP3485 | P2610BT | DMN3035LWN

Keywords - BSF050N03LQ3G MOSFET datasheet

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