BSL211SP Specs and Replacement
Type Designator: BSL211SP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.9 nS
Cossⓘ - Output Capacitance: 241 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: TSOP6
BSL211SP substitution
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BSL211SP datasheet
bsl211sp.pdf
Rev 2.0 BSL211SP OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -20 V P-Channel RDS(on) 67 m Enhancement mode ID -4.7 A Super Logic Level (2.5 V rated) P-TSOP6-6 150 C operating temperature Avalanche rated dv/dt rated 4 3 5 2 Pb-free lead plating; RoHS compliant 6 1 Qualified according to AEC Q101 ... See More ⇒
bsl211dv.pdf
SMD Type MOSFET Transistors P-Channel Enhancement Mode MOSFET BSL211DV(KSL211DV) Features ( ) SOT-23-6 Unit mm +0.1 Super Logic Level (2.5 V rated) 0.4-0.1 150 C operating temperature 6 5 4 Avalanche rated dv/dt rated 2 3 1 +0.02 D D 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 G G S S 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 ,u... See More ⇒
bsl214n.pdf
BSL214N OptiMOS ' .99 '64;.9 (>.;?6?@ %>E Features 20 V DS T H5@ ) 7... See More ⇒
Detailed specifications: BSC900N20NS3G, BSD223P, BSD314SPE, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, BSF083N03LQG, BSL207SP, NCEP15T14, BSL215P, BSL307SP, BSL308PE, BSL314PE, BSL315P, BSO604NS2, BSO033N03MSG, BSO040N03MSG
Keywords - BSL211SP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP0903GYT | IMZA65R048M1H
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