BSO080P03SH
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSO080P03SH
Marking Code: 080P3S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 12.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 102
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 1180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
SO8
BSO080P03SH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSO080P03SH
Datasheet (PDF)
..1. Size:308K infineon
bso080p03sh.pdf
BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8m DS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Haloge
4.1. Size:323K infineon
bso080p03s1.pdf
BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8mDS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Halo
5.1. Size:673K infineon
bso080p03ns3e g.pdf
'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 mWDS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8
5.2. Size:652K infineon
bso080p03ns3 g 2.2.pdf
'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 m DS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8Q "2=@86? 7B66
5.3. Size:533K infineon
bso080p03ns3g.pdf
BSO080P03NS3 GOptiMOS3 P3-Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 8.0mW Qualified according JEDEC1) for target applicationsVGS=-6 V 11.4 150C operating temperatureID -14.8 A V =25 V, specially suited for notebook applicationsGS Pb-free plating; RoHS compliantPG-DSO-8 applications: batter
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